GaAs-based MOVPE epitaxial layers for HEMT/HBT/BiHEMT structure of high frequency amplifier for wireless communication or laser diode structure of optical disk drive.

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Product Information

Generic name

Compound Semiconductor Epitaxial Wafer, GaAs (Gallium arsenide) Metalorganic Vapor Phase Epitaxy

CAS no.

1303-00-0

Application

• S0000
• T0000
• T0400
• U0000
• U0100
• U0200

Department

SCIOCS Dept., Advanced Inorganic Products Division

Contact

2-7-1, Nihonbashi, Chuo-ku, Tokyo 103-6020, Japan
TEL: +81-3-5201-0323
FAX: +81-3-5201-0483
Website of SCIOCS Dept., Advanced Inorganic Products Division