GaN epitaxial wafers
RF
Application
- Wireless infrastructures
- Avionics / Satellite / Radar
- CATV transmitters
- Microwave oven
- Wireless power receiver / rectenna
- General RF PA; high power and high efficiency
Features
- Proprietary epi-nucleation and buffer structure technology to realize high RF efficiency, high breakdown, and controlled RF transient / dispersion.
- Superior in yield, repeatability, and within-wafer uniformity
- Actual install-base track records in wireless infrastructures and securities
Products
- AlGaN/GaN HEMT epitaxial wafers on S.I. SiC substrates.
- AlGaN/GaN HEMT epitaxial wafers on S.I. GaN substrates.
- Back-barrier epi structures are available.
Power
Application
- Power switching diodes
- Power transistors
- Electric Vehicles / Solar-Photo Voltaic / Data Saver / Appliances
- Artificial photosynthesis
- Sensors
Features
- Low dislocation density and low point-defect density, delivered by the use of high quality native GaN substrates
- Controlled shallow doping in the thick drift layers to achieve low on-resistance and high breakdown.
Over 3.0kV breakdown voltages
Products
- p/n-GaN homo-epitaxial wafers on freestanding S.C. GaN substrates.
- n-GaN for Schottky diodes homo-epitaxial wafers on freestanding S.C. GaN substrates.
- AlGaN/GaN HEMT epitaxial wafers on S.I. SiC substrates.
- Products
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