KNN ((K, Na)NbO3) piezoelectric thin film wafer
We supply lead free KNN ((K, Na) NbO₃) piezoelectric thin film wafers formed using sputtering. Thanks to proprietary technologies that deliver high throughput, large diameters, and high surface uniformity, these materials can be used in a broad range of applications, including as variants engineered for actuator use (with high piezoelectric constant and high breakdown voltage) and as for sensor use (with low relative permittivity films).
KNN film wafer and patterned KNN film wafer (6 inch and 8 inch)
Application
- Sensor
Angular rate sensor (gyro sensor), ultrasonic sensor (PMUT), acceleration sensor - Actuator
MEMS mirror (LiDAR, HUD, HMD), ink jet printer head, variable focal length lens - MEMS devices
Micro speaker, electric power generation from environmental vibration (vibration energy harvesting), resonator
Features
- The only one practically applicable lead free KNN piezoelectric thin film in the industry
- Comparable piezoelectric properties with PZT (Pb(Zr, Ti)O3 ) without containing Substances of Concern
- High uniaxially oriented and dense polycrystalline KNN film by sputtering method
- High uniform film on large size wafers (4 inch, 6 inch and 8 inch)
- KNN film properties can be tailored to sensor-type and actuator type upon customer requirement
- DC stress life time and tolerance temperature for spontaneous polarization exceeds PZT performance
Cross sectional SEM
X-ray diffraction profile (2θ/θ)
Structure
Products
- KNN film deposited silicon wafer (SOI wafer, customer supplied wafer)
- MEMS device processed wafer (with customer supplied photomask data)
MEMS device structure (typical)
KNN film properties
P-E characteristics for actuator type
P-E characteristics for sensor type
